2N6093
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-217
DESCRIPTION:
The 2N6093 is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
10 A
IC
VCE
PDISS
TJ
35 V
83.3 W @ TC = 75 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.50 OC/W
1 = Emitter & Diode Cathode
2 = Collector
3 = Base
TSTG
θJC
4 = Diode Anode
¼-28 UNF Thread
NONE
CHARACTERISTICS TC = 25 O
C
SYMBOL
BVCEO
BVCES
ICES
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
IC = 200 mA
35
70
V
V
IC = 200 mA
VCE = 60 V
IE = 20 mA
VCE = 6.0 V
IF = 10 mA
VCE = 28 V
TC = 55 OC
30
mA
V
BVEBO
hFE
3.5
20
IC = 5.0 A
IC = 1.0 A
---
V
VF
0.8
hfe
f = 50 MHz
f = 1.0 MHz
POE = 37.5 W
2.0
---
COB
PIE
VCB = 30 V
250
pF
W
1.88
3.75
VCC = 28 V
f = 30 MHz
IC = 20 mA
POE = 75.0 W
13
40
GPE
ηC
IMD
dB
%
dB
VCC = 28 V
IC = 20 mA
POE = 75.0 W
f = 30 MHz
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]