2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1972 is Designed for RF
power amplifiers on VHF band mobile
radio applications.
FEATURES INCLUDE:
PACKAGE STYLE TO-220AB (COMMON EMITTER)
•
•
•
Replaces Original 2SC1972 in
Most Applications
High Gain Reduces Drive
Requirements
Economical TO-220CE Package
MAXIMUM RATINGS
3.5 A
IC
35 V
VCBO
PDISS
TSTG
25 W @ TC = 25 °C
-55 °C to +175 °C
6.0 °C/W
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 10 mA
IE = 10 mA
17
V
35
BVCBO
BVEBO
ICBO
V
4.0
V
VCES = 25 V
VEB = 3.0 V
VCE = 10 V
100
500
180
µA
µA
---
IEBO
IC = 100 mA
PIN = 2.5 W
10
50
hFE
60
14
70
15
%
W
ηC
POUT
VCC = 13.5 V
f =175 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]