2SC2782
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2782 is a12.5 V epitaxial
silicon NPN transistor. Designed primarily
for VHF power amplifer application up
to175 MHz band.
PACKAGE STYLE .500 6L FLG
A
C
1
3
2x ØN
FULL R
D
G
FEATURES:
4
E
2
B
.725/18,42
F
• 175 MHz 12.5 V
• PG = 6.4 dB at 80 W/175 MHz
• Omnigold™ Metalization System
• Common Emitter configuration
M
K
H
I
L
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
.045 / 1.14
MAXIMUM RATINGS
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
20 A
36 V
IC
VCBO
VCEO
VEBO
PDISS
TJ
.125 / 3.18
16 V
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
4.0 V
K
L
220 W @ TC = 25 °C
-65 °C to +175 ° C
-65 °C to +175 °C
0.68 °C/W
M
N
.120 / 3.05
1 = Collecttor 2 = Base 3&4 = Emitter
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCEO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 50 mA
IC = 20 mA
IE = 1.0 mA
16
36
4.0
10
V
BVCBO
BVEBO
hFE
V
V
V
CE = 5.0 V
IC = 10 A
100
390
---
pF
dB
%
V
CB = 12.5 V
f = 1.0 MHz
f = 175 MHz
COB
PG
VCC = 12.5 V
PIN = 18 W
POUT = 80 W
6.4
60
6.8
70
ηC
V
CC = 12.5 V
CC = 12.5 V
POUT = 80 W
POUT = 80 W
f = 175 MHz
f = 175 MHz
---
---
1.0 + j1.5
1.2 + j1.8
---
---
ZIN
Ω
Ω
V
ZCL
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]