2SC2879
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2879 is a 12.5 V
transistor designed primarily for SSB
linear power amplifier applications up
tp 28 MHz.
PACKAGE STYLE .500 4L FLG
.112x45°
L
A
FEATURES:
Ø.125 NOM.
FULL R
C
E
C
• PG = 13 Typ. min. at 100 W/28 MHz
• IMD3 = -24 dBc max. at 100 W(PEP)
• Omnigold™ Metalization System
B
B
E
E
D
F
G
H
K
J
I
MAXIMUM RATINGS
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
IC
25 A
45 V
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.125 / 3.18
.125 / 3.18
.245 / 6.22
.255 / 6.48
18 V
.720 / 18.28
.7.30 / 18.54
.970 / 24.64
.495 / 12.57
.003 / 0.08
.090 / 2.29
.150 / 3.81
.980 / 24.89
.505 / 12.83
.007 / 0.18
.110 / 2.79
.175 / 4.45
.280 / 7.11
1.050 / 26.67
4.0 V
250 W @ TC = 25 °C
-65 °C to +175 °C
-65 °C to +175 °C
0.6 °C/W
J
K
L
.980 / 24.89
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCES
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 100 mA
IC = 100 mA
IE = 10 mA
VCE = 5.0 V
45
18
4.0
10
V
BVCEO
BVEBO
hFE
V
V
IC = 10 A
150
---
COB
GP
VCB = 12.5 V
f = 1.0 MHz
f = 28 MHz
700
pF
dB
13.0
35
15.2
VCE = 12.5 V
Iidle = 100 mA
%
dBc
ηC
IMD3
POUT = 100 W
-24
---
VCC = 12.5 V
VCC = 12.5 V
POUT = 100 W
POUT = 100 W
f = 28 MHz
f = 28 MHz
---
---
1.45 – j0.95
1.45 – J1.0
ZIN
Ω
Ω
---
ZOUT
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]