2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC2904 is a silicon
epitaxial plana type transistor designed
for high power amplifiers in HF band.
PACKAGE STYLE .500 6L FLG
A
C
FEATURES:
2x ØN
FULL R
• Internal Input Matching Network
• PG = 11.5 dB at 1000 W/30 MHz
• Omnigold™ Metalization System
D
B
E
.725/18,42
F
G
M
K
MAXIMUM RATINGS
H
I
L
J
22 A
50 V
IC
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
.150 / 3.43
.160 / 4.06
A
B
C
D
E
F
G
H
I
VCBO
VCEO
VEBO
PDISS
TJ
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
20 V
4.0 V
.125 / 3.18
200 W @ TC = 25 °C
-55 °C to +175 °C
-55 °C to +175 °C
0.75 °C/W
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
J
K
L
M
N
TSTG
θJC
.120 / 3.05
Common Emitter configuration
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 20 mA
IC = 100 mA
IE = 20 mA
50
V
20
BVCEO
BVEBO
ICBO
4.0
V
V
V
V
CB = 15 V
CB = 3.0 V
CE = 10 V
5.0
5.0
mA
mA
---
IEBO
IC = 1.0 A
10
180
hFE*
100
55
110
60
PO
W
%
VCE = 12.5 V
PIN = 7.0 W
f = 30 MHz
ηC
NOTE: *Pulse test, PW=150µS. duty=5%
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]