H V V1011-600 High Voltage, High Ruggedness
L-Band High Power Pulsed Transistor
1030/1090 MHz, 50µs Pulse, 2% Duty
For TCAS, IF F and Mode-S Applications
Typical device performance under Class AB mode of operation at 1090MHz and RF pulse conditions of 50µs
pulse width and 2% duty cycle with VDD = 50V and IDQ = 100mA. The high voltage silicon vertical technology
shows less than 2dB of power degradation over an extreme case teperature rise of 125°C.
Measured at P1dB Compression Point
TEMP
-40C
Gain (dB) Power (W) Power (dBm)
18.7
17.9
17.4
16.6
787
802
733
580
59.0
59.0
58.7
57.6
0C
25C
85C
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ASI [ ADVANCED SEMICONDUCTOR ]
