5082-3306
FAST SWITCHING SILICON PIN DIODE
DESCRIPTION:
The
ASI 5082-3306
is a passivated
silicon PIN diode of mesa construction.
Designed for controlling and
processing microwave signals up to Ku
band.
PACKAGE STYLE 51
FEATURES:
•
50 W Peak Pulse Power
•
Switching time < 5 nS
•
Heat Sink Cathode
MAXIMUM RATINGS
P
DISS
T
J
T
STG
0.25 W @ T
C
= 25 °C
-65 °C to +150 °C
-65 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
V
B
C
T
R
S
t
rr
I
R
= 10
µA
V
R
= 20 V
I
F
= 20 mA
I
F
= 20 mA
T
C
= 25 °C
TEST CONDITIONS
f = 1.0 MHz
f = 100 MHz
V
R
= 10 V
MINIMUM TYPICAL MAXIMUM
70
0.45
1.0
10
UNITS
V
pF
Ω
nS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
