ACDN301
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI ACDN301 is Designed for
Television Band IV & V Applications
up to 860 MHz.
PACKAGE STYLE .400 BAL FLG(C)
A
.080x45°
B
FULL R
(4X).060 R
FEATURES:
E
M
D
• Common Emitter
C
• PG = 8.5 dB at 100 W/860 MHz
• Omnigold™ Metalization System
.1925
F
G
H
N
I
L
K
MAXIMUM RATINGS
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
DIM
16 A
30 V
IC
.220 / 5.59
.230 / 5.84
A
B
C
D
E
F
G
H
I
.210 / 5.33
VCEO
VCBO
VEBO
PDISS
TJ
.120 / 3.05
.380 / 9.65
.780 / 19.81
.130 / 3.30
.390 / 9.91
.820 / 20.83
65 V
.435 / 11.05
1.090 / 27.69
3.5 V
1.335 / 33.91
.003 / 0.08
.060 / 1.52
.082 / 2.08
1.345 / 34.16
.007 / 0.18
.070 / 1.78
.100 / 2.54
.205 / 5.21
.407 / 10.34
.870 / 22.10
220 W @ TC = 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.8 °C/W
J
K
L
.395 / 10.03
.850 / 21.59
M
N
TSTG
θJC
CHARACTERISTICS TC = 25 °C
SYMBOL
BVCBO
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
IC = 40 mA
IC = 80 mA
IE = 20 mA
IC = 120 mA
65
30
3.5
40
V
BVCEO
BVEBO
BVCER
ICEO
V
V
RBE = 75 Ω
V
V
CE = 28 V
CE = 5 V
10
mA
---
V
IC = 4.0 A
25
120
hFE
V
CB = 28 V
f = 1.0 MHz
f = 860 MHz
50
COB
pF
ICQ = 200 mA
ICQ = 200 mA
POUT = 100 W
Pref = 25 W
8.5
55
PG
ηC
P1dB
dB
%
f = 860 MHz
100
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
1/1
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
ASI [ ADVANCED SEMICONDUCTOR ]