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MRF171 参数 Datasheet PDF下载

MRF171图片预览
型号: MRF171
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型TMOS RF FET [N-Channel Enhancement Mode TMOS RF FET]
分类和应用: 晶体晶体管放大器局域网
文件页数/大小: 1 页 / 35 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
MRF171
TMOS RF FET
N-Channel Enhancement Mode
DESCRIPTION:
The
ASI MRF171
is a gold metallized
N-Channel Enhancement mode
MOSFET, intended for use in 28 VDC
large signal applications to 200 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
FEATURES:
S
D
S
C
D
E
Ø.125 NOM.
FULL R
J
.125
P
G
= 12 dB min at 150 MHz
Omnigold™
Metalization System
2 – 200 MHz operation
G
F
I
GH
MAXIMUM RATINGS
I
D
V
DSS
V
DGR
V
GS
P
DISS
T
J
T
STG
θ
JC
4.5 A
65 V
65 V
±
40 V
115 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
1.52 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
C
iss
C
oss
C
rss
G
ps
η
T
C
= 25 °C
NONE
TEST CONDITIONS
I
DS
= 10 mA
V
DS
= 28 V
V
DS
= 0 V
I
D
= 25 mA
I
D
= 1 A
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 20 V
V
DS
= 10 V
V
DS
= 10 V
MINIMUM
65
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
µA
V
mho
1.0
0.7
55
70
14
12
50
15
60
6.0
V
DS
= 28 V
V
DD
= 28 V
f = 150 MHz
V
GS
= 0 V
I
DQ
= 25 mA
f = 1.0 MHz
P
out
= 45 W
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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