MRF406
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
MRF406
is Designed for
12.5 V 30 MHz Power Amplifier
Applications.
PACKAGE STYLE .380" 4L FLG
B
.112 x 45°
A
FEATURES INCLUDE:
•
Common Emitter
•
Output Power = 20 W
(PEP)
F
E
B
C
D
E
C
E
Ø.125 NOM.
FULL R
J
.125
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
G
H I
4.0 A
20 V
40 V
80 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.2 C/W
O
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
.240 / 6.10
.004 / 0.10
.085 / 2.16
.160 / 4.06
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CES
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
C
ob
P
out
G
PE
η
IMD
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 1.0 mA
T
C
= 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
40
20
4.0
5.0
UNITS
V
V
V
V
mA
---
V
CE
= 12.5 V
I
C
= 1.0 A
V
CB
= 12.5 V
V
CE
= 12.5 V
V
CC
= 12.5 V
I
cq
= 25 mA
V
CC
= 12.5 V
I
cq
= 25 mA
I
C
≤
1.75 A
V
CE
= 5.0 V
f = 1.0 MHz
f = 30 MHz
P
out
= 20 W
(PEP)
f = 30, 30.001 MHz
P
out
= 20 W
(PEP)
f = 30, 30.001 MHz
20
12
45
-30
10
35
200
pF
W
(PEP)
dB
%
dB
ψ
I
C
≤
1.75 A
>30:1
ALL PHASE ANGLES
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
