Electrical Specifications
T
A
= 25°C unless otherwise specified.
Parameter
Transfer Gain
Symbol
K
3
Device
HCNR200
HCNR201
HCNR201
Min.
0.85
0.95
0.93
Typ.
1.00
1.00
1.00
Max.
1.15
1.05
1.07
Units
Test Conditions
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
-40°C < T
A
< 85°C,
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
Fig.
2,3
Note
1
1
1
Temperature
Coefficient of
Transfer Gain
DC NonLinearity
(Best Fit)
ΔK
3
/ΔT
A
-65
ppm/°C
-40°C < T
A
< 85°C,
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
-40°C < T
A
< 85°C,
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
2,3
NL
BF
HCNR200
HCNR201
HCNR201
0.01
0.01
0.01
0.25
0.05
0.07
%
4,5,
6
2
2
2
DC Nonlinearity
(Ends Fit)
Input Photo-
diode Current
Transfer Ratio
(I
PD1
/I
F
)
Temperature
Coefficient
of K
1
Photodiode
Leakage Current
Photodiode
Reverse Break-
down Voltage
Photodiode
Capacitance
LED Forward
Voltage
NL
EF
K
1
HCNR200
HCNR201
ΔK
1
/ΔT
A
0.25
0.36
0.016
%
0.50
0.48
-0.3
0.75
0.72
%/°C
%
5 nA < I
PD
< 50 μA,
0 V < V
PD
< 15 V
I
F
= 10 mA,
0 V < V
PD1
< 15 V
7
3
-40°C < T
A
< 85°C,
I
F
= 10 mA
0 V < V
PD1
< 15 V
I
F
= 0 mA,
0 V < V
PD
< 15 V
I
R
= 100 μA
7
I
LK
BV
RPD
30
0.5
150
25
nA
V
8
C
PD
V
F
1.3
1.2
22
1.6
1.6
9
1.85
1.95
pF
V
V
PD
= 0 V
I
F
= 10 mA
I
F
= 10 mA,
-40°C < T
A
< 85°C
9,
10
LED Reverse
Breakdown
Voltage
Temperature
Coefficient of
Forward Voltage
LED Junction
Capacitance
BV
R
2.5
V
I
F
= 100 μA
ΔV
F
/ΔT
A
-1.7
mV/°C
I
F
= 10 mA
C
LED
80
pF
f = 1 MHz,
V
F
= 0 V
8
AVAGO [ AVAGO TECHNOLOGIES LIMITED ]
