@vic
MMBT3904LT1
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
MMBT3904LT1 TRANSISTOR (NPN)
FEATURES
2. EMITTER
3. COLLECTOR
Power dissipation
2. 4
1. 3
PCM:
0.2
W (Tamb=25℃)
Collector current
ICM:
0.2
60
A
Collector-base voltage
V(BR)CBO
:
V
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
60
40
6
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100 µA, IE=0
Ic= 1 mA, IB=0
V
IE= 100µA, IC=0
VCB= 60V, IE=0
0.1
0.1
0.1
300
µA
µA
µA
ICEO
VCE= 40V, IB=0
Collector cut-off current
IEBO
VEB= 5V, IC=0
Emitter cut-off current
HFE(1)
VCE=10V, IC= 1mA
VCE= 1V, IC= 50mA
IC=50mA, IB= 5mA
IC= 50mA, IB= 5mA
100
60
DC current gain
HFE(2)
VCE(sat)
VBE(sat)
0.3
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.95
V
CE= 20V, IC= 10mA
250
MHz
Transition frequency
fT
f=100MHz
35
35
nS
nS
nS
nS
Delay Time
Rise Time
td
tr
VCC=3.0Vdc, VBE=-0.5Vdc
IC=10mAdc, IB1=1.0mAdc
200
50
Storage Time
ts
tf
VCC=3.0Vdc, IC=10mAdc
IB1=IB2=1.0mAdc
Fall Time
DEVICE MARKING
MMBT3904LT1=1AM
Copyright @vic Electronics Corp.
Website http://www.avictek.com
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