@vic
AV1015LT1
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
AV1015LT1
TRANSISTOR（ PNP ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
Collector current
ICM
:
0.2
W（Tamb=25℃）
2.4
1.3
:
-0.15
A
V
Collector-base voltage
V(BR)CBO : -50
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
-50
-50
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic= -100μA， IE=0
Ic= -0.1mA， IB=0
IE= -10μA， IC=0
(BR)CBO
V
V
(BR)CEO
V(BR)EBO
V
ICBO
ICEO
VCB=-50 V , IE=0
-0.1
-0.1
-0.1
400
-0.3
-1.1
μA
μA
μA
Collector cut-off current
VCE= -50 V , IB=0
VEB=- 5V , IC=0
Emitter cut-off current
IEBO
DC current gain
HFE(1)
VCE=-6V, IC= -2mA
IC=-100 mA, IB= -10mA
IC=-100 mA, IB= -10mA
130
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=-10V, I = -1mA
C
Transition frequency
fT
80
MHz
f=30MHz
CLASSIFICATION OF H
FE(1)
Rank
L
H
Range
130-200
200-400
MARKING
BA
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1
Website http://www.avictek.com
AVICTEK [ Avic Technology ]
