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AV13005
TO-220 NPN SILICON POWER TRANSISTOR
AV13005 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 1.5 W（Tamb=25℃）
Collector current
ICM : 4.0 A
Collector-base voltage
V
(BR)CBO : 700 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 1000μA， IE=0
Ic= 10 mA， IB=0
IE= 1000μA， IC=0
VCB= 700 V IE=0
VCE= 400 V IB=0
VEB= 9 V， IC=0
MIN MAX UNIT
700
400
9
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
μA
μA
μA
1000
100
1000
40
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
HFE
（ ）
2
VCE= 5V, IC = 1000 mA
10
5
DC current gain
VCE(sat)
VBE(sat)
IC= 2000 mA, IB= 500 mA
0.6
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC= 2000mA, IB= 500mA
VCE= 10 V, IC= 500 mA
1.6
MHz
fT
Transition frequency
f =1MHz
0.9
4.0
TF
TS
Fall time
IB1 = - IB2 =0.4A, IC =2A
μS
V
CC =120V
Storage time
CLASSIFICATION OF HFE(2)
Rank
A
B1
B2
20-25
C
D
E
10-15
15-20
25-30
30-35
35-40
Range
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com
AVICTEK [ Avic Technology ]
