@vic
AV42
SOT— 23
1. BASE
AV42LT1
TRANSISTOR( NPN )
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
:
0.3
W(Tamb=25℃)
2.4
1.3
Collector current
ICM:
0.3
A
Collector-base voltage
V(BR)CBO : 300
V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
Unit : mm
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
300
300
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic= 100 μA, IE=0
Ic= 1 mA, IB=0
(BR)CBO
V
V
(BR)CEO
V
IE= 100μA, IC=0
VCB=200 V , IE=0
VEB= 5V , IC=0
V
(BR)EBO
ICBO
0.25
0.1
μA
μA
Emitter cut-off current
IEBO
HFE(1)
VCE= 10V, IC= 1mA
VCE= 10V, IC=10mA
VCE=10V, IC=30mA
60
100
60
DC current gain
HFE(2)
HFE(3)
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC=20 mA, IB= 2mA
0.2
0.9
V
V
VBE(sat)
IC= 20 mA, IB=2mA
VCE= 20V, I = 10mA
C
Transition frequency
fT
50
MHz
f=30MHz
DEVICE MARKING
MMBTA42LT1=1D
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com