@vic
AV882
TO-126 Plastic-Encapsulate Transistors
AV882 TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 1.25 W（Tamb=25℃）
Collector current
ICM : 3 A
Collector-base voltage
V
(BR)CBO : 40 V
Operating and storage junction temperature range
TO-126
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100μA， IE=0
Ic= 10 mA， IB=0
IE= 100 μA， IC=0
VCB= 40 V， IE=0
VCE= 30 V， IB=0
VEB= 6 V， IC=0
MIN
40
30
6
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
1
1
µA
µA
µA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
1
HFE
HFE
（
）
）
V
CE= 2 V, IC= 1A
60
32
400
1
2
DC current gain
（
VCE= 2 V, IC= 100mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
IC= 2A, IB= 0.2 A
IC= 2A, IB= 0.2 A
0.5
2
V
V
VCE= 5V , Ic=0.1A
f =10MHz
50
MHz
CLASSIFICATION OF HFE(1)
Rank
R
O
Y
GR
200-400
Range
60-120
100-200
160-320
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com
AVICTEK [ Avic Technology ]
