@vic
AV9012
TO-92 Plastic-Encapsulate Transistors
AV9012 TRANSISTOR（ PNP ）
FEATURES
TO—92
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : -0.5 A
1. EMITTER
2. BASE
Collector-base voltage
V
(BR)CBO : -40 V
Operating and storage junction temperature range
3.COLLECTOR
TJ，Tstg: -55℃ to +150℃
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -100μA， IE=0
Ic= -0. 1 mA， IB=0
IE= -100μA， IC=0
VCB=-40 V IE=0
VCE=- 20 V IB=0
VEB= - 5 V， IC=0
MIN
-40
-25
-5
MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
μA
μA
μA
-0.1
-0.2
-0.1
300
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
HFE
HFE
（
）
）
V
CE= -1 V, IC= -50 mA
CE= -1V, IC =-500 mA
64
40
1
2
DC current gain
（
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
CE(sat)
BE(sat)
IC=-500 mA, IB=-50 mA
IC=-500mA,IB=-50 mA
IE=-100mA
-0.6
-1.2
-1.4
V
V
V
V
VEB
VCE=- 6 V, IC= -20 mA
f =30MHz
Transition frequency
150
MHz
fT
CLASSIFICATION OF HFE(1)
Rank
D
E
F
G
H
I
64-91
78-112
96-135
112-166
144-202
190-300
Range
Copyright © Avic Electronics Corp.
1
Website: http://www.avictek.com
AVICTEK [ Avic Technology ]
