@vic
AV9014
TO-92 Plastic-Encapsulate Transistors
AV9014 TRANSISTOR（ NPN
）
FEATURES
Power dissipation
P
CM
: 0.4 W（Tamb=25℃）
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TO—92
1. EMITTER
2. BASE
3.COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
H
FE
V
CE
(sat)
V
BE
(sat)
Test conditions
Ic= 100
μ
A， I
E
=0
Ic= 0. 1 mA， I
B
=0
I
E
= 100
μ
A， I
C
=0
V
CB
=50 V , I
E
=0
V
CE
=35 V , I
B
=0
V
EB
= 3 V， I
C
=0
V
CE
= 5 V, I
C
= 1mA
I
C
= 100mA, I
B
= 5 mA
I
C
= 100 mA, I
B
= 5mA
V
CE
= 5 V, I
C
= 10mA
60
MIN
50
45
5
0.1
0.1
0.1
1000
0.3
1
V
V
MAX
UNIT
V
V
V
μ
A
μ
A
μ
A
Transition frequency
f
T
f =
30MHz
150
MHz
CLASSIFICATION OF HFE
Rank
Range
A
60-150
B
100-300
C
200-600
D
400-1000
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
