@vic
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR（ PNP
）
FEATURES
Power dissipation
P
CM
: 0.625 W（Tamb=25℃）
Collector current
I
CM
: -0.3 A
Collector-base voltage
V
(BR)CBO
: -300 V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TO—92
AV92
1. EMITTER
2. BASE
3.COLLECTOR
1
2 3
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified
）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
H
FE
（
1
）
Test conditions
Ic= -100
μ
A， I
E
=0
Ic= -1 mA， I
B
=0
I
E
= -10
μ
A， I
C
=0
V
CB
= -200 V I
E
=0
V
EB
= - 3 V， I
C
=0
V
CE
= -10 V, I
C
= -1 mA
V
CE
=-10V, I
C
=-10 mA
V
CE
= -10V, I
C
= -50 mA
I
C
= -20 mA, I
B
=-2 mA
I
C
= -20mA, I
B
= -2 mA
V
CE
= -5 V, I
C
= -10 mA
MIN
-300
-300
-5
MAX
UNIT
V
V
V
-0.25
-0.25
25
80
25
-0.5
-0.9
250
μ
A
μ
A
DC current gain
H
FE
（
2
）
H
FE
（
3
）
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
V
V
f
T
f =
30MHz
50
MHz
CLASSIFICATION OF HFE
(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250
Copyright © Avic Electronics Corp.
1
Website:
http://www.avictek.com
AVICTEK [ Avic Technology ]
