@vic
MMBT2907ALT1
SOT-23 Plastic-Encapsulate Transistors
MMBT2907ALT1
FEATURES
Power dissipation
P
CM:
0.3
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
W (Tamb=25℃)
1. 0
2. 4
1. 3
0. 95
Collector current
-0.6 A
I
CM
:
Collector-base voltage
-60 V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
V
CE
=-10V, I
C
= -1mA
I
C
=-500mA, I
B
=-50 mA
I
C
= -500mA, I
B
=-50 mA
V
CE
=-20V, I
C
= -50mA
Transition frequency
2. 9
1. 9
0. 95
Unit: mm
unless otherwise specified)
Test
conditions
MIN
-60
-60
-5
-0.1
-0.1
-0.1
100
50
-1
-2
V
V
300
TYP
MAX
UNIT
V
V
V
µA
µA
µA
Ic= -10µA , I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -10µA, I
C
=0
V
CB
= -50V, I
E
=0
V
CB
= -3V, I
B
=0
V
EB
= -3V, I
C
=0
V
CE
=-10V, I
C
= -150mA
f
T
f =
100MHz
200
0. 4
MHz
DEVICE MARKING:
MMBT2907ALT1 =2F
Copyright @vic Electronics Corp.
Website http://www.avictek.com
AVICTEK [ Avic Technology ]
