@vic
MMBTA44
SOT-23-3L Plastic-Encapsulate Transistors
SOT-23-3L
MMBTA44
TRANSISTOR（ NPN ）
1.BASE
2.EMITTER
3.COLLECTOR
FEATURES
Power dissipation
2.80±0.05
1.60±0.05
PCM
Collector current
ICM
Collector-base voltage
(BR)CBO : 400 V
:
0.35 W
（Tamb=25℃）
:
0.2 A
V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
MIN
400
400
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic= 100μA ， IE=0
IC= 1 mA ,
IE=100μA，
VCB=400 V ,
VCE=400 V ,
VEB= 4 V ,
IB=0
IC=0
IE=0
V
V
0.1
5
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
IC=0
0.1
300
HFE
（ ）
1
V
V
V
CE=10V , IC=10 mA
80
70
60
DC current gain
CE=10V, IC=1mA
CE=10V ,IC=100 mA
HFE
（ ）
2
HFE
（ ）
3
VCE(sat)
VCE(sat)
VBE(sat)
IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
IC=10 mA, IB= 1 mA
VCE=20V, IC=10mA
0.2
0.3
V
V
V
Collector-emitter saturation voltage
Base-emitter sataration voltage
0.75
Transition
frequency
f T
50
MHz
f =30MHz
MARKING:3D
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1
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