欢迎访问ic37.com |
会员登录 免费注册
发布采购

REF5050AID 参数 Datasheet PDF下载

REF5050AID图片预览
型号: REF5050AID
PDF下载: 下载PDF文件 查看货源
内容描述: 低噪声,极低漂移,高精度电压基准 [Low-Noise, Very Low Drift, Precision VOLTAGE REFERENCE]
分类和应用:
文件页数/大小: 18 页 / 611 K
品牌: BURR-BROWN [ BURR-BROWN CORPORATION ]
 浏览型号REF5050AID的Datasheet PDF文件第1页浏览型号REF5050AID的Datasheet PDF文件第3页浏览型号REF5050AID的Datasheet PDF文件第4页浏览型号REF5050AID的Datasheet PDF文件第5页浏览型号REF5050AID的Datasheet PDF文件第6页浏览型号REF5050AID的Datasheet PDF文件第7页浏览型号REF5050AID的Datasheet PDF文件第8页浏览型号REF5050AID的Datasheet PDF文件第9页  
SBOS410 – JUNE 2007
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE/ORDERING INFORMATION
(1)
PRODUCT
STANDARD GRADE (8ppm, 0.1%)
REF5020A
2.048V
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
(2)
(2)
(2)
(2)
(2)
(2)
OUTPUT VOLTAGE
PACKAGE-LEAD
PACKAGE DESIGNATOR
PACKAGE MARKING
D
DGK
D
DGK
D
DGK
D
DGK
D
DGK
D
DGK
REF5020
R50A
REF5025
R50B
REF5030
R50C
REF5040
R50D
REF5045
R50E
REF5050
R50F
REF5025A
2.5V
REF5030A
3.0V
REF5040A
4.096V
REF5045A
4.5V
REF5050A
HIGH GRADE (3ppm, 0.05%)
REF5020I
5.0V
2.048V
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
SO-8
MSOP-8
(2)
(2)
(2)
(2)
(2)
(2)
D
DGK
D
DGK
D
DGK
D
DGK
D
DGK
D
DGK
REF5020
R50A
REF5025
R50B
REF5030
R50C
REF5040
R50D
REF5045
R50E
REF5050
R50F
REF5025I
2.5V
REF5030I
3.0V
REF5040I
4.096V
REF5045I
4.5V
REF5050I
5.0V
(1)
(2)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at
MSOP-8 (DGK) package available Q3, 2007.
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
Input Voltage
Output Short-Circuit
Operating Temperature Range
Storage Temperature Range
Junction Temperature (T
J
max)
ESD Rating
(1)
Human Body Model (HBM)
Charged Device Model (CDM)
REF50xx
+18
30
–55 to +125
–55 to +150
+150
3000
1000
UNIT
V
mA
°C
°C
°C
V
V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
2
Copyright © 2007, Texas Instruments Incorporated
Product Folder Link(s):