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AH266_07 参数 Datasheet PDF下载

AH266_07图片预览
型号: AH266_07
PDF下载: 下载PDF文件 查看货源
内容描述: 高压霍尔效应锁存 [HIGH VOLTAGE HALL EFFECT LATCH]
分类和应用: 高压
文件页数/大小: 11 页 / 190 K
品牌: BCDSEMI [ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]
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Data Sheet
HIGH VOLTAGE HALL EFFECT LATCH
Absolute Maximum Ratings (Note 1)
(T
A
=25
o
C)
Parameter
Supply Voltage
Reverse Protection Voltage
Magnetic Flux Density
Continuous
Output Current
Hold
Peak (Start up)
Power Dissipation
Die to atmosphere
Thermal Resistance
Die to package case
Storage Temperature
ESD (Machine Model)
P
D
θJA
θJC
T
STG
I
O
Symbol
V
CC
V
RCC
B
Value
30
-30
Unlimited
400 (Note 2)
600
800
550
227
49
-50 to 150
300
Unit
V
V
Gauss
mA
mA
mA
mW
o
C/W
o
C/W
o
AH266
C
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. "Absolute Maximum Ratings" for extended period may affect
device reliability.
Note 2: Continuos output current is 200mA at 85
o
C.
Recommended Operating Conditions
Parameter
Supply Voltage
Operating Ambient Temperature
Symbol
V
CC
T
A
Min
5
-20
Max
28
85
Unit
V
o
C
Feb. 2007 Rev. 1. 1
4
BCD Semiconductor Manufacturing Limited