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BL7430EC 参数 Datasheet PDF下载

BL7430EC图片预览
型号: BL7430EC
PDF下载: 下载PDF文件 查看货源
内容描述: 它具有104位EEPROM与逻辑加密功能 [It has 104bits EEPROM with logical encryption and function]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 4 页 / 137 K
品牌: BELLING [ SHANGHAI BELLING CO., LTD. ]
 浏览型号BL7430EC的Datasheet PDF文件第1页浏览型号BL7430EC的Datasheet PDF文件第2页浏览型号BL7430EC的Datasheet PDF文件第3页  
BL7430EC 104-bit EEPROM Smart
Counter Circuit
Electrical Parameter
Absolute Maximum Ratings
Parameter
Supply voltage
Input voltage (any pin)
Storage temperature
ESD protection
Endurance
Data retention
Symbol
V
CC
V
I
T
S
Vs
Limit Values
min.
typ.
Max
-0.3
6.0
-0.3
6.0
-40
125
4000
10
5
10
Unit
V
V
V
Write/erase
cycles/bit
Years
ISO/IEC
7816-1
Test Condition
Operation Range
Parameter
Symbol
V
CC
I
CC
Ta
Limit Values
min.
typ.
Max
4.75
5.0
5.5
3.0
-35
+80
Unit
V
mA
Test Condition
V
CC
=5V
Supply voltage
Supply current
Ambient temperature
DC characteristics
Parameter
Symbol
V
IN
V
IL
I
OL
I
OL
Limit Values
min.
typ.
Max
3.5
V
CC
0.8
1
10
Unit
V
V
mA
µA
V
OL
=0.5V,open
drain
V
OH
=0.5V,open
drain
Test Condition
High-level input voltage
(I/O,CLK,RST)
Low-level input voltage
(I/O,CLK,RST)
Low-level output
current(I/O)
High-level output
current(I/O)
AC characteristics
Parameter
Symbol
t
R
t
s
t
H
t
L
t
HW
t
HE
t
d1
t
d2
t
d3
t
d4
t
d5
t
d6
t
d7
t
d8
t
d9
t
d10
Limit Values
min.
typ.
Max
50
10
10
10
5
5
5
5
5
3.5
5
5
10
3.5
3.5
3.5
Unit
µs
µs
µs
µs
ms
ms
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Test Condition
RST(address reset)
RST(set R-flag)
CLK (count,H-level)
CLK (count,L-level)
CLK (write,H-level)
CLK (erase,H-level)
Delay time
http://www.belling.com.cn
-4-
Total
4 Pages
8/16/2006