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1N5061 参数 Datasheet PDF下载

1N5061图片预览
型号: 1N5061
PDF下载: 下载PDF文件 查看货源
内容描述: 标准硅整流二极管 [Standard silicon rectifier diodes]
分类和应用: 整流二极管测试
文件页数/大小: 2 页 / 160 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号1N5061的Datasheet PDF文件第2页  
BL
FEATURES
GALAXY ELECTRICAL
1N5059---1N5062
VOLTAGE RANGE:
200---800
V
CURRENT:
2.0
A
PLASTIC SILICON RECTIFIER
Low cos t
Diffus ed junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Eas ily cleaned with Freon,Alcohol, ls opropand
and s im ilar s olvents
DO -
15
MECHANICAL DATA
Cas e: JEDEC DO-15, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD
-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces , 0.39gram s
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N5059
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=50
1N5060
400
280
400
2.0
1N5061
600
420
600
1N5062
800
560
800
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous
forw ard voltage
Maximum reverse current
@T
J
=125
@1.0A
@
2.5A
@T
A
=25
(Note1)
(Note2)
(Note3)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
50.0
1.0
1.15
1.0
100
4.0
40
45
- 55 ----- + 175
- 55 ----- + 175
A
V
A
µ
s
pF
at rated DC blocking voltage @T
A
=150
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
K/W
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
www.galaxycn.com
Document Number 0260043
BL
GALAXY ELECTRICAL
1.