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MBR840 参数 Datasheet PDF下载

MBR840图片预览
型号: MBR840
PDF下载: 下载PDF文件 查看货源
内容描述: 肖特基势垒整流器 [SCHOTTKY BARRIER RECTIFIER]
分类和应用: 二极管瞄准线功效局域网
文件页数/大小: 2 页 / 200 K
品牌: BILIN [ GALAXY SEMI-CONDUCTOR HOLDINGS LIMITED ]
 浏览型号MBR840的Datasheet PDF文件第2页  
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FEATURES
GALAXY ELECTRICAL
MBR830 - - - MBR8100
VOLTAGE RANGE: 30 -
100
V
CURRENT:
8.0
A
SCHOTTKY BARRIER RECTIFIER
High s urge capacity.
For us e in low voltage, high frequency inverters , free
111wheeling,
and polarity protection applications .
Metal s ilicon junction, m ajority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
TO-220AC
MECHANICAL DATA
Cas e:JEDEC TO-220AC,m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750,
1 1
Method 2026
Polarity: As m arked
Pos ition: Any
Weight:
0.064 ounces,1.81 gram
mm
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
MBR
830
Maximum recurrent peak reverse voltage
Maximum RMS V oltage
Maximum DC blocking voltage
Maximum average forw ard total device11111111
m
rectified current @T
C
= 125°C
Peak forw ard surge current 8.3ms single half
b
sine-w ave superimposed on rated load
Maximum forw ard
voltage
(Note 1)
(I
F
=8.0A ,T
C
=125 )
(I
F
=8.0A,T
C
=25
(I
F
=16A ,T
C
=25
)
)
MBR
835
35
25
35
MBR
840
40
28
40
MBR
845
45
32
45
8.0
MBR
850
50
35
50
MBR
860
60
42
60
MBR MBR
880 8100
80
56
80
100
70
100
UNITS
V
V
V
A
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
30
21
30
150
0.57
0.70
0.80
0.95
0.1
15
3.0
-
55
---- + 150
-
55
---- + 150
-
0.85
-
0.5
V
F
0.70
0.84
V
Maximum reverse current
at rated DC blocking voltage
@T
C
=25
@T
C
=125
I
R
R
θJC
T
J
T
STG
mA
50
K/W
Maximum thermal resistance
(Note 2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2.
Thermal resistance f rom junction to
case.
www.galaxycn.com
Document Number 0266039
BL
GALAXY ELECTRICAL
1.