NPN SILICON PLANAR SWITCHING TRANSISTORS
2N2218A
2N2219A
TO-39
Boca Semiconductor Corp.
BSC
Switching And Linear Application DC And VHF Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
2N2218A,19A
UNIT
V
V
V
mA
mW
mW/deg C
W
mW/deg C
deg C
VCEO
40
Collector -Emitter Voltage
VCBO
75
Collector -Base Voltage
VEBO
6.0
Emitter -Base Voltage
IC
800
Collector Current Continuous
PD
800
Power Dissipation @Ta=25 degC
4.57
Derate Above 25deg C
PD
3.0
@ Tc=25 degC
17.1
Derate Above 25deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter-Base Voltage
Collector-Cut off Current
SYMBOL TEST CONDITION
VCEO
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=0
VCB=60V, IE=0
VALUE
MIN
MAX
40
-
75
-
6.0
-
-
10
UNIT
V
V
V
nA
Emitter-Cut off Current
Base-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Ta=150 deg C
VCB=60V, IE=0
ICEX
VCE=60V, VEB=3V
IEBO
VEB=3V, IC=0
IBL
VCE=60V, VEB=3V
VCE(Sat)* IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(Sat) * IC=150mA,IB=15mA
IC=500mA,IB=50mA
-
-
-
-
-
-
-
10
10
10
20
0.3
1.0
0.6-1.2
2.0
uA
nA
nA
nA
V
V
V
V
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