NPN SILICON PLANAR EPITAXIAL TRANSISTORS
2N2369
2N2369A
TO-18
Boca Semiconductor Corp.
BSC
APPLICATIONS
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With
Low Power & High Speed Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
VCEO
15
V
Collector -Emitter Voltage
VCES
40
V
Collector -Emitter Voltage
VCBO
40
V
Collector -Base Voltage
VEBO
4.5
V
Emitter -Base Voltage
IC
200
mA
Collector Current Continuous
500
mA
Collector Current Peak(10us pulse)
IC(peak)
PD
360
mW
Power Dissipation@ Ta=25 degC
2.06
mW/deg C
Derate Above 25 deg C
PD
1.2
W
@Tc=25 deg C
PD
0.68
W
@Tc=100 deg C
6.85
mW/deg C
Derate Above100 deg C
Tj, Tstg
-65 to +200
deg C
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
2N2369
2N2369A UNIT
>15
>15
V
VCEO*(sus)IC=10mA, IB=0
Collector -Emitter Voltage
VCES
IC=10uA, VBE=0
>40
>40
V
Collector -Emitter Voltage
VCBO
IC=10uA, IE=0
>40
>40
V
Collector -Base Voltage
VEBO
IE=10uA, IC=0
>4.5
>4.5
V
Emitter -Base Voltage
ICBO
VCB=20V, IE=0
<400
-
nA
Collector-Cut off Current
VCB=20V, IE=0, Ta=150 deg C
<30
-
uA
ICES
VCE=20V, VBE=0
-
<400
nA
IB
VCE=20V, VBE=0
-
<400
nA
Base Current
<0.25
<0.20
V
Collector Emitter Saturation Voltage
VCE(Sat)* IC=10mA,IB=1mA
IC=30mA,IB=3mA
-
<0.25
V
IC=100mA,IB=10mA
-
<0.50
V
IC=10mA,IB=1mA,Ta= +125 deg C
-
<0.30
V
VBE(Sat) * IC=10mA,IB=1mA
0.7-0.85
0.7-0.85
V
Base Emitter Saturation Voltage
IC=30mA,IB=3mA
-
<1.15
V
IC=100mA,IB=10mA
-
<1.60
V
IC=10mA,IB=1mA,Ta= +125 deg C
-
>0.59
V
IC=10mA,IB=1mA, Ta= -55 deg C
-
<1.02
V
hFE*
IC=10mA, VCE=1V
40-120
40-120
DC Current
IC=10mA,VCE=1V, Ta= -55 deg C
>20
-
IC=10mA,VCE=0.35V, Ta= -55 deg C -
>20
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