2N6486, 2N6487, 2N6488
2N6489, 2N6490, 2N6491
Collector current
Base current
Total power dissipation up to T
C
= 25°C
Derate above 25°C
Total power dissipation up to T
A
= 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to case
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
Collector cutoff current
I
B
= 0; V
CE
= 20 V
I
B
= 0; V
CE
= 30 V
I
B
= 0; V
CE
= 40 V
V
EB(off)
= 1.5 V; V
CE
= 45 V
V
EB(off)
= 1.5 V; V
CE
= 65 V
V
EB(off)
= 1.5 V; V
CE
= 85 V
V
EB(off)
= 1.5 V; V
CE
= 40 V;
V
EB(off)
= 1.5 V; V
CE
= 60 V;
V
EB(off)
= 1.5 V; V
CE
= 80 V;
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
Breakdown voltages
I
C
= 200 mA; I
B
= 0
I
C
= 1 mA; I
E
= 0
I
C
= 200 mA; V
BE
= 1.5 V
I
E
= 1 mA; I
C
= 0
Saturation voltages
I
C
= 5 A; I
B
= 0.5 A
I
C
= 15 A; I
B
= 5 A
Base-emitter on voltage
I
C
= 5 A; V
CE
= 4 V
I
C
= 15 A; V
CE
= 4 V
D.C. current gain
I
C
= 5 A; V
CE
= 4 V
I
C
I
B
P
tot
P
tot
T
j
T
stg
R
th j–a
R
th j–c
max.
max.
max.
max.
max.
max.
max.
15
5.0
75
0.6
1.8
0.014
150
–65 to +150
70
1.67
A
A
W
W
/°C
W
W
/°C
°C
°C
°C W
/
°C W
/
6486 6487 6488
6489 6490 6491
max. 1.0
max. –
max. –
max. 500
max. –
max. –
max. 5.0
max. –
max. –
max.
min. 40
min. 50
min. 50
min.
max.
max.
max.
max.
min.
max.
min.
min.
min.
–
1.0
–
–
500
–
–
5.0
–
1.0
60
70
70
5.0
1.3
3.5
1.3
3.5
20
150
5.0
5.0
25
MHz
80
90
90
–
–
1.0
–
–
500
–
–
5.0
mA
mA
mA
µA
µA
µA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
I
CEO
I
CEO
I
CEO
I
CEX
I
CEX
I
CEX
T
C
=150°C I
CEX
T
C
=150°C I
CEX
T
C
=150°C I
CEX
I
EBO
V
CEO(sus)
*
V
CBO
V
CEX(sus)
*
V
EBO
V
CEsat
*
V
CEsat
*
V
BE(on)
*
V
BE(on)
*
h
FE
*
h
FE
*
f
T(1)
h
fe
I
C
= 15 A; V
CE
= 4 V
Transition frequency
I
C
= 1 A; V
CE
= 4 V; f = 1 MHz
Small signal current gain
I
C
= 1.0A; V
CE
= 4V; f = 1.0 KHz
* Pulse test: pulse width
≤
300 µs; duty cycle
≤
2%
(1) f
T
= |h
fe
|• f
test
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