PNP SILICON PLANAR EPITAXIAL TRANSISTORS
Boca Semiconductor Corp.
BSC
http://www.bocasemi.com
BC 556, A, B
BC 557, 8, A, B, C
TO-92
EBC
APPLICATION
PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio
Amplifier, Low Noise Input Stages of Tape Recorders, HI-FI Amplifiers, Signal Processing
Circuits of Television Receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C unless otherwise specified)
DESCRIPTION
SYMBOL
BC556
VCEO
65
Collector -Emitter Voltage
VCES
80
Collector -Emitter Voltage
VCBO
80
Collector -Base Voltage
VEBO
Emitter -Base Voltage
IC
Collector Current Continuous
ICM
Peak
IBM
Base Current -Peak
IEM
Emitter Current- Peak
PTA
Power Dissipation@ Ta=25 degC
Derate Above 25 deg C
Tstg
Storage Temperature
Tj
Junction Temperature
THERMAL RESISTANCE
Rth(j-a)
Junction to Ambient
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BC556
VCEO
IC=2mA,IB=0
>65
Collector -Emitter Voltage
VCBO
IC=100uA.IE=0
>80
Collector -Base Voltage
VEBO
IE=100uA, IC=0 ALL
Emitter-Base Voltage
ICBO
VCB=30V, IE=0 ALL
Collector-Cut off Current
Tj=150 deg C
VCB=30V, IE=0 ALL
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
TJ=125 deg C
VCE=80V, VBE=0
VCE=50V, VBE=0
VCE=30V, VBE=0
BC557
45
50
50
5.0
100
200
200
200
500
4.0
-65 to +150
150
BC558
30
30
30
UNITS
V
V
V
V
mA
mA
mA
mA
mW
mW/deg C
deg C
deg C
250
BC557
BC558
>45
>30
>50
>30
>5.0
<15
deg C/W
UNITS
V
V
V
nA
<5.0
<15
-
-
-
<15
-
-
-
<15
ICES
uA
nA
nA
nA
Collector-Cut off Current
ICES
<4.0
-
-
-
<4.0
-
-
<4.0
uA
uA
uA