BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD243
45
60
Collector-emitter
BD243A
BD243B
BD243C
BD243
V(BR)CEO
IC
=
30 mA
IB = 0
V
breakdown voltage
80
(see Note 5)
100
VCE
VCE
VCE
=
=
=
55 V
70 V
90 V
V
BE = 0
0.4
0.4
0.4
0.4
0.7
0.7
Collector-emitter
cut-off current
VBE = 0
VBE = 0
VBE = 0
BD243A
BD243B
BD243C
BD243/243A
BD243B/243C
ICES
mA
VCE = 115 V
Collector cut-off
current
VCE
VCE
=
=
30 V
60 V
IB = 0
ICEO
IEBO
hFE
mA
mA
IB = 0
Emitter cut-off
current
VEB
=
5 V
IC = 0
1
Forward current
transfer ratio
VCE
VCE
=
=
4 V
4 V
IC = 0.3 A
30
15
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
IC
=
3 A
Collector-emitter
saturation voltage
Base-emitter
VCE(sat)
VBE
IB
=
1 A
4 V
IC
=
6 A
1.5
2
V
V
VCE
VCE
VCE
=
=
=
IC
=
6 A
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
hfe
10 V
10 V
IC = 0.5 A
IC = 0.5 A
20
3
|hfe|
f = 1 MHz
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RθJC
RθJA
1.92
62.5
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 1 A
BE(off) = -3.7 V
IB(on) = 0.1 A
I
B(off) = -0.1 A
0.3
1
µs
µs
V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
2
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
