BD250, BD250A, BD250B, BD250C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS636AD
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS636AB
h
FE
- DC Current Gain
100
-1·0
10
-0·1
I
C
=
I
C
=
I
C
=
I
C
=
-0·1
-1·0
-10
-25 A
-20 A
-15 A
-10 A
-100
1
-0·1
-1·0
-10
-100
-0·01
-0·001
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
-0·01
I
C
- Collector Current - A
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·8
V
CE
= -4 V
T
C
= 25°C
TCS636AC
V
BE
- Base-Emitter Voltage - V
-1·6
-1·4
-1·2
-1·0
-0·8
-0·6
-0·1
-1·0
-10
-100
I
C
- Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
