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BD539B 参数 Datasheet PDF下载

BD539B图片预览
型号: BD539B
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅功率晶体管 [NPN SILICON POWER TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 104 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD540 Series
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V V
CEO
rating
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD539
BD539A
Collector-base voltage
BD539B
BD539C
BD539D
BD539
BD539A
Collector-emitter voltage (see Note 1)
BD539B
BD539C
BD539D
Emitter-base voltage
Continuous collector current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating free air temperature range
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
V
EBO
I
C
P
tot
P
tot
T
A
T
j
T
stg
T
L
V
CEO
V
CBO
SYMBOL
VALUE
40
60
80
100
120
40
60
80
100
120
5
5
45
2
-65 to +150
-65 to +150
-65 to +150
260
V
A
W
W
°C
°C
°C
°C
V
V
UNIT
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1