BUL770
NPN SILICON POWER TRANSISTOR
●
●
●
●
●
Designed Specifically for High Frequency
Electronic Ballasts up to 50 W
h
FE
7 to 21 at V
CE
= 1 V, I
C
= 800 mA
Low Power Losses (On-state and Switching)
Key Parameters Characterised at High
Temperature
Tight and Reproducible Parametric
Distributions
B
C
E
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )
RATING
Collector-emitter voltage (V
BE
= 0)
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Peak collector current (see Note 2)
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTES: 1. This value applies for t
p
= 10 ms, duty cycle
≤
2%.
2. This value applies for t
p
= 300 µs, duty cycle
≤
2%.
SYMBOL
V
CES
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
700
700
400
9
2.5
6
8
1.5
2.5
50
-65 to +150
-65 to +150
UNIT
V
V
V
V
A
A
A
A
A
W
°C
°C
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1