BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
●
●
●
Rugged Triple-Diffused Planar Construction
9 A Continuous Collector Current
1000 Volt Blocking Capability
B
SOT-93 PACKAGE
(TOP VIEW)
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (V
BE
= -2.5 V)
Collector-emitter voltage (R
BE
= 10
Ω)
Collector-emitter voltage (I
B
= 0)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for t
p
≤
5 ms, duty cycle
≤
2%.
BUV47
BUV47A
BUV47
BUV47A
BUV47
BUV47A
SYMBOL
V
CEX
V
CER
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
VALUE
850
1000
850
1000
400
450
9
15
3
6
120
-65 to +150
-65 to +150
UNIT
V
V
V
A
A
A
A
W
°C
°C
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
