欢迎访问ic37.com |
会员登录 免费注册
发布采购

CDNBS08-T36C 参数 Datasheet PDF下载

CDNBS08-T36C图片预览
型号: CDNBS08-T36C
PDF下载: 下载PDF文件 查看货源
内容描述: CDNBS08 - T03 〜 T36C - TVS二极管阵列系列 [CDNBS08-T03~T36C - TVS Diode Array Series]
分类和应用: 二极管电视
文件页数/大小: 4 页 / 332 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
 浏览型号CDNBS08-T36C的Datasheet PDF文件第2页浏览型号CDNBS08-T36C的Datasheet PDF文件第3页浏览型号CDNBS08-T36C的Datasheet PDF文件第4页  
PL
Features
Applications
IA
NT
Lead free as standard
RoHS compliant*
Protects 4 lines
Unidirectional & bidirectional
configurations
ESD protection > 40 KV
Audio/video inputs
RS-232, RS-422 & RS-423 data lines
Portable electronics
Medical sensors
*R
oH
S
CO
M
CDNBS08-T03~T36C – TVS Diode Array Series
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD
protection applications, in 8 lead narrow body SOIC package size format. The
Transient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional configurations. Bourns
®
Chip
Diodes conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their flat configuration minimizes roll away.
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Symbol
T
J
T
STG
Max.
-55 to +150
-55 to +150
Unit
°C
°C
1
2
3
4
8
7
6
5
1
8
2
7
3
6
4
5
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
CDNBS08-
Parameter
Symbol Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
Uni-
Bi-
T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C
Unit
Breakdown Voltage @ 1 mA
Working Peak Voltage
Maximum Clamping Voltage
VC @ IP
1
Maximum Clamping Voltage
@ 8/20 µs VC @ IPP
1
Maximum Leakage Current
@ VWM
Maximum Cap Unidirectional
@ 0 V, 1 MHz
V
BR
V
WM
V
F
V
F
I
D
C
j(SD)
C
j(SD)
P
PP
V
F
3.3
3.0
4.0
10.9 V
@ 43 A
125
800
450
6.0
5.0
9.8
13.5 V
@ 42 A
20
550
308
8.5
8.0
13.4
16.9 V
@ 34 A
10
500
300
13.3
12.0
19.0
25.9 V
@ 27 A
1
185
105
500
1.5
16.7
15.0
24.0
30.0 V
@ 17 A
1
140
80
26.7
24.0
43.0
49.0 V
@ 12 A
1
88
50
40.0
36.0
51.0
76.8 V
@9A
1
80
45
V
V
V
V
µA
pF
pF
W
V
Maximum Cap Bidirectional
@ 0 V, 1 MHz
Peak Pulse Power (tp = 8/20 µs)
2
Forward Voltage @ 100 mA,
300 µs – Square Wave
3
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e. CDNBS08-T03C.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.