TIP32, TIP32A,TIP32B, TIP32C
PNP SILICON POWER TRANSISTORS
JULY 1968 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS632AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
TCS632AB
h
FE
- DC Current Gain
-1·0
100
-0·1
I
C
= -100 mA
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
-1·0
-10
-100
-1000
10
-0·01
-0·1
-1·0
-10
-0·01
-0·1
I
C
- Collector Current - A
I
B
- Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1
V
CE
= -4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
-0·9
TCS632AC
-0·8
-0·7
-0·6
-0·5
-0·01
-0·1
-1
-10
I
C
- Collector Current - A
Figure 3.
PRODUCT
INFORMATION
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
