TISP30xxF3 (LV) Overvoltage Protector Series
Typical Characteristics - R and G or T and G Terminals
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
TC3LAH
NORMALIZED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
I
H
, I
(BO)
- Holding Current, Breakover Current - A
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1.3
TC3LAB
Normalized Breakover Voltage
I
(BO)
1.2
Positive
I
H
0.2
1.1
Negative
0.1
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
1.0
0·001
0·01
0·1
1
10
100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 6.
Figure 7.
100
OFF-STATE CAPACITANCE
vs
TERMINAL VOLTAGE
TC3LAE
OFF-STATE CAPACITANCE
vs
JUNCTION TEMPERATURE
500
TC3LAD
Positive Bias
Off-State Capacitance - pF
Off-State Capacitance - pF
Negative Bias
100
Terminal Bias = 0
Terminal Bias = 50 V
Terminal Bias = -50 V
10
0·1
10
1
Terminal Voltage - V
10
50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature -
°C
Figure 8.
Figure 9.
MARCH 1994 - REVISED MARCH 2006
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
