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TISP8200MDR-S 参数 Datasheet PDF下载

TISP8200MDR-S图片预览
型号: TISP8200MDR-S
PDF下载: 下载PDF文件 查看货源
内容描述: 互补BUFFERED -GATE SCRS用于双极性SLIC过压保护 [COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION]
分类和应用:
文件页数/大小: 13 页 / 325 K
品牌: BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
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TISP8200M & TISP8201M
Voltage Stress Levels on the TISP8200M and TISP8201M (Continued)
Testing transistor CB and SCR AK off state:
The highest AK voltage occurs during the overshoot period of the protector. To make sure that the
SCR blocking junction does not break down during this period, a d.c. test for off-state current can be applied at the overshoot voltage value.
To avoid transistor CB current amplification by the transistor gain, the transistor base-emitter is shorted during this test (see Figure 8).
Summary:
Two tests are needed to verify the protector junctions. Maximum current values for IR and ID are required.
TISP
8201M
A
K
0V
RING
OR
TIP
A
C
B (G)
V
BATH
E
V
BATR
C
B (G)
0V
K
E
TISP
8200M
AI8XAH
Figure 6. Protector Electrodes
I
R
V
(BO)
8201M
A
I
R
(internal)
I
EB
TISP
8201M
V
BATR
B (G)
0V
0V
I
R
(internal)
K
I
EB
B (G)
V
BATH
V
(BO)
8200M
I
R
AI8XAJ
TISP
8200M
Figure 7. Reverse Current Verification
I
D
A
V
(BO)
8201M
0V
V
(BO)
8200M
I
D
(internal)
K
I
D
I
D
(internal)
B (G)
I
CB
I
CB
B (G)
TISP
8200M
AI8XAK
TISP
8201M
0V
Figure 8. Off-State Current Verification
MAY 1998 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.