BH616UV1611
n
BYTE FUNCTION
PARAMETER
NAME
t
BS
t
BR
BYTE Setup Time
BYTE Recovery Time
PARAMETER
MIN.
5
5
MAX.
--
--
UNITS
ms
ms
CE2
CE1
t
BS
t
BR
BYTE
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
READ CYCLE
JEDEC
PARANETER
PARAMETER
NAME
NAME
CYCLE TIME : 55ns
DESCRIPTION
Read Cycle Time
Address Access Time
Chip Select Access Time
Chip Select Access Time
Data Byte Control Access Time
Output Enable to Output Valid
Chip Select to Output Low Z
Chip Select to Output Low Z
Data Byte Control to Output Low Z
Output Enable to Output Low Z
Chip Deselect to Output High Z
Chip Deselect to Output High Z
(CE1)
(CE2)
(CE1)
(CE2)
(LB, UB)
(CE1)
(CE2)
(LB, UB)
MIN.
55
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
55
55
55
55
25
--
--
--
--
25
25
25
25
--
CYCLE TIME : 70ns
MIN.
70
--
--
--
--
--
10
10
10
5
--
--
--
--
10
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
70
70
70
70
35
--
--
--
--
35
35
35
30
--
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
O
O
t
AVAX
t
AVQX
t
E1LQV
t
E2LQV
t
BLQV
t
GLQV
t
E1LQX
t
E2LQX
t
BLQX
t
GLQX
t
E1HQZ
t
E2HQZ
t
BHQZ
t
GHQZ
t
AVQX
t
RC
t
AA
t
ACS1
t
ACS2
t
BA
t
OE
t
CLZ1
t
CLZ2
t
BE
t
OLZ
t
CHZ1
t
CHZ2
t
BDO
t
OHZ
t
OH
Data Byte Control to Output High Z (LB, UB)
Output Disable to Output High Z
Data Hold from Address Change
R0201-BH616UV1611
6
Revision 1.3
Otc.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
