BH616UV1611
n Revision History
Revision No.
History
Draft Date
Remark
Initial
1.0
1.1
Initial Production Version
May 10,2006
May 25, 2006
Change I-grade operation temperature range
- from –25OC to –40OC
1.2
1.3
Add Part Number for 70ns
July 21, 2006
Otc 22, 2006
Add DICE form and 48 TSOP-I package type
Change BGA package dimension for single chip solution
- form 6x8 mm to 8x10mm
Improve Spec.
- ICC(MAX.) from 12mA to 10mA for VCC=3.6V
- ICCsb1(TYP.) from 5.0uA to 4.0uA for VCC=1.8V
- ICCDR(TYP.) from 2.5uA to 1.5uA for VCC=1.2V
- tOE(MIN.) from 30ns to 25ns
- tAW(MIN.) from 45ns to 40ns
- tCW(MIN.) from 45ns to 40ns
- tBW(MIN.) from 45ns to 40ns
Revision 1.3
R0201-BH616UV1611
12
Otc.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
