Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit / 2M x 8-bit
Pb-Free and Green package materials are compliant to RoHS
BH616UV1611
n
FEATURES
Ÿ
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 3.6V
Operation current : 10mA (Max.) at 55ns
2mA (Max.) at 1MHz
Standby current : 5.0uA (Typ.) at 3.0V/25
O
C
V
CC
= 1.2V
Data retention current : 1.5uA(Typ.) at 25
O
C
Ÿ
High speed access time :
-55
55ns (Max.) at V
CC
=1.65~3.6V
-70
70ns (Max.) at V
CC
=1.65~3.6V
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE1, CE2 and OE options
Ÿ
I/O Configuration x8/x16 selectable by LB and UB pin.
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refresh
Ÿ
Data retention supply voltage as low as 1.0V
n
DESCRIPTION
The BH616UV1611 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with typical operating current of
1.5mA at 1MHz at 3.0V/25
O
C and maximum access time of 55ns at
1.65V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1611 is available in DICE form, JEDEC standard
48-pin TSOP-I and 48-ball BGA package.
n
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
BH616UV1611DI
BH616UV1611BI
BH616UV1611TI
Industrial
-40
O
C to +85
O
C
30uA
25uA
2mA
6mA
10mA
1.5mA
5mA
8mA
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=1.8V
10MHz
f
Max.
V
CC
=3.6V
V
CC
=1.8V
1MHz
V
CC
=3.6V
10MHz
f
Max.
1MHz
DICE
BGA-48-0810
TSOP I-48
n
PIN CONFIGURATIONS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
CE2
NC
UB
LB
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
A
B
C
D
E
F
G
H
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
5
A2
CE1
DQ1
DQ3
DQ4
DQ5
WE
A11
6
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
NC
A16
BYTE
VSS
DQ15/A20
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
VSS
CE1
A0
n
BLOCK DIAGRAM
A15
A14
A13
A12
A11
A10
A9
A8
A19
A18
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 16384
BH616UV1611TI
16384
DQ0
.
.
.
.
.
.
DQ15
.
.
.
.
.
.
16
Data
Input
Buffer
Data
Output
Buffer
16
1024
Column Decoder
10
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
16
2
OE
UB
DQ10
DQ11
DQ12
DQ13
A19
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
CE2, CE1
WE
OE
UB
LB
V
CC
V
SS
A16 A0 A17 A7 A6 A5 A4 A3 A2 A1
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV1611
1
Revision 1.3
Otc.
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
