BH616UV8011
n AC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
WRITE CYCLE
JEDEC
PARAMETER
NAME
CYCLE TIME : 55ns
PARANETER
DESCRIPTION
UNITS
NAME
MIN.
55
0
TYP.
--
MAX.
--
tAVAX
tAVWL
tAVWH
tELWH
tBLWH
tWLWH
tWHAX
tE2LAX
tWLQZ
tDVWH
tWHDX
tGHQZ
tWHQX
tWC
tAS
Write Cycle Time
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Address Set up Time
--
--
tAW
tCW
tBW
tWP
tWR1
tWR2
tWHZ
tDW
tDH
Address Valid to End of Write
45
45
45
35
0
--
--
Chip Select to End of Write
--
--
Data Byte Control to End of Write
(LB, UB)
--
--
Write Pulse Width
--
--
Write Recovery Time
(CE1, WE)
(CE2)
--
--
Write Recovery Time
0
--
--
Write to Output High Z
--
--
20
--
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
25
0
--
--
--
tOHZ
tOW
--
--
25
--
5
--
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1 (1)
tWC
ADDRESS
OE
(3)
tWR1
(11)
tCW
(5)
(5)
CE1
CE2
(11)
tCW
(3)
tWR2
tBW
LB, UB
tAW
(2)
tWP
WE
tAS
(4,10)
tOHZ
DOUT
tDH
tDW
DIN
Revision 1.1
May 2006
R0201-BH616UV8011
7
BSI [ BRILLIANCE SEMICONDUCTOR ]
