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BH616UV8011AIG70 参数 Datasheet PDF下载

BH616UV8011AIG70图片预览
型号: BH616UV8011AIG70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 512K ×16位 [Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit]
分类和应用: 静态存储器
文件页数/大小: 11 页 / 234 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH616UV8011
ORDERING INFORMATION
BH616UV8011
X
X
Z
YY
SPEED
-55: 55ns
-70: 70ns
PKG MATERIAL
G: Green, RoHS Compliant
P: Pb free, RoHS Compliant
GRADE
o
o
I: -40 C ~ +85 C
PACKAGE
A: BGA-48-0608
T: TSOP I-48
Note:
Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does
not authorize its products for use as critical components in any application in which the failure of the BSI product may be expected to result
in significant injury or death, including life-support systems and critical medical instruments.
PACKAGE DIMENSIONS
NOTES:
1: CONTROLLING DIMENSIONS ARE IN MILLIMETERS.
2: PIN#1 DOT MARKING BY LASER OR PAD PRINT.
3: SYMBOL "N" IS THE NUMBER OF SOLDER BALLS.
1.2 Max.
BALL PITCH e = 0.75
D
8.0
E
6.0
N
48
D1
5.25
E1
3.75
D1
e
VIEW A
48 mini-BGA (6 x 8)
E1
R0201-BH616UV8011
9
Revision
1.2
Oct.
2008