Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit
Pb-Free and Green package materials are compliant to RoHS
BH616UV1611
FEATURES
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ultra low power consumption :
V
CC
= 3.6V
Operation current : 12mA (Max.)at 55ns
2mA (Max.) at 1MHz
Standby current : 30uA (Max.) at 3.6V/85 C
V
CC
= 1.2V
-55/-70
Data retention current : 15uA(Max.) at 85 C
55ns (Max.) at V
CC
=3.0V
70ns (Max.) at V
CC
=1.8V
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.0V
O
O
DESCRIPTION
The BH616UV1611 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum standby current of
39uA at 3.6V/85 C and maximum access time of 55/70ns at
3.0V/1.8V.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1611 is made with two chips of 8Mbit SRAM by
stacked multi-chip-package.
The BH616UV1611 is available in 48-ball BGA package.
O
High speed access time :
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=1.8V
10MHz
f
Max.
V
CC
=3.6V
V
CC
=1.8V
1MHz
V
CC
=3.6V
10MHz
f
Max.
1MHz
BH616UV1611AI
Industrial
O
-40 C to +85 C
O
30uA
25uA
2mA
6mA
12mA
1.5mA
5mA
8mA
BGA-48-0608
PIN CONFIGURATIONS
1
A
B
C
D
E
F
G
H
LB
DQ8
DQ9
VSS
VCC
DQ14
DQ15
A18
2
OE
UB
DQ10
DQ11
DQ12
DQ13
A19
A8
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CE1
DQ1
DQ3
DQ4
DQ5
WE
A11
6
CE2
DQ0
DQ2
VCC
VSS
DQ6
DQ7
NC
BLOCK DIAGRAM
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 16384
16384
DQ0
.
.
.
.
.
.
DQ15
CE2, CE1
WE
OE
UB
LB
V
CC
V
SS
.
.
.
.
.
.
16
16
Data
Input
Buffer
Data
Output
Buffer
16
1024
Column Decoder
10
Control
Address Input Buffer
16
Column I/O
Write Driver
Sense Amp
A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to change products and specifications without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH616UV1611
1
Revision
1.1
Oct.
2008
BSI [ BRILLIANCE SEMICONDUCTOR ]
