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BH62UV1600 参数 Datasheet PDF下载

BH62UV1600图片预览
型号: BH62UV1600
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 2M ×8位 [Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 127 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
n
FEATURES
Ultra Low Power/High Speed CMOS SRAM
2M X 8 bit
n
DESCRIPTION
BH62UV1600
Ÿ
Wide V
CC
low operation voltage : 1.65V ~ 3.6V
Ÿ
Ultra low power consumption :
V
CC
= 3.0V
Operation current : 5.0mA at 70ns at 25
O
C
1.5mA at 1MHz at 25
O
C
Standby current : 3uA at 25
O
C
V
CC
= 2.0V
Data retention current : 3uA at 25
O
C
Ÿ
High speed access time :
-70
70ns at 1.8V at 85
O
C
Ÿ
Automatic power down when chip is deselected
Ÿ
Easy expansion with CE1, CE2 and OE options
Ÿ
Three state outputs and TTL compatible
Ÿ
Fully static operation, no clock, no refreash
Ÿ
Data retention supply voltage as low as 1.0V
The BH62UV1600 is a high performance, ultra low power CMOS Static
Random Access Memory organized as 2,048K by 8 bits and operates in
a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both high
speed and low power features with typical operating current of 1.5mA at
1MHz at 3.6V/25
O
C and maximum access time of 70ns at 1.8V/85
O
C.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH62UV1600 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BH62UV1600 is made with two chips of 8Mbit SRAM by stacked
multi-chip-package.
The BH62UV1600 is available 48-ball BGA package.
n
PRODUCT FAMILY
PRODUCT
FAMILY
OPERATING
TEMPERATURE
+0
O
C to +70
O
C
BH62UV1600AI
-25 C to +85 C
O
O
V
CC
RANGE
SPEED
(ns)
V
CC
=1.8~3.6V
POWER CONSUMPTION
STANDBY
(I
CCSB1
, Max)
Operating
(I
CC
, Max)
PKG TYPE
V
CC
=3.6V V
CC
=1.8V V
CC
=3.6V V
CC
=1.8V
70
1.65V ~ 3.6V
70
20uA
25uA
15uA
20uA
10mA
10mA
7mA
BGA-48-0608
7mA
n
PIN CONFIGURATIONS
1
A
NC
2
OE
3
A0
4
A1
5
A2
6
CE2
n
BLOCK DIAGRAM
B
NC
NC
A3
A4
CE1
NC
C
DQ0
NC
A5
A6
NC
D04
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
Address
Input
Buffer
10
Row
Decoder
1024
Memory Array
1024 x 16384
D
VSS
DQ1
A17
A7
DQ5
VCC
16384
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
8
Data
Input
Buffer
8
2048
Column Decoder
11
Control
Address Input Buffer
8
Column I/O
Write Driver
Sense Amp
E
VCC
DQ2
VSS
A16
DQ6
VSS
8
F
D3
NC
A14
A15
NC
DQ7
Data
Output
Buffer
G
NC
A20
A12
A13
WE
NC
H
A18
A8
A9
A10
A11
A19
CE1
CE2
WE
OE
V
CC
GND
A20 A19 A18 A17 A15 A14 A13 A16 A2 A1 A0
48-ball BGA top view
Brilliance Semiconductor, Inc.
reserves the right to modify document contents without notice.
Detailed product characteristic test report is available upon request and being accepted.
R0201-BH62UV1600
1
Revision 1.0
Jul.
2005