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BH62UV4000SI55 参数 Datasheet PDF下载

BH62UV4000SI55图片预览
型号: BH62UV4000SI55
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM 512K ×8位 [Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit]
分类和应用: 存储静态存储器
文件页数/大小: 12 页 / 397 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BH62UV4000  
n PACKAGE DIMENSIONS (continued)  
DIMENSION  
(MM)  
DIMENSION  
(INCH)  
17  
32  
MIN.  
NOM. MAX. MIN.  
NOM. MAX.  
0.047  
1.20  
0.15  
A
A1  
0.004  
0.006  
0.042  
0.05  
0.95  
0.10  
1.00  
0.002  
0.037  
1.05  
0.039  
0.016  
A2  
b
0.30  
0.30  
0.12  
0.52  
0.45  
0.21  
0.012  
0.012  
0.005  
0.020  
0.018  
0.008  
b1  
c
0.40  
c1  
D
E
0.10  
0.127  
20.95  
0.16  
0.004  
0.820  
0.455  
0.394  
0.005  
0.825  
0.006  
0.830  
0.471  
0.405  
21.08  
11.96  
10.29  
20.82  
11.56  
10.03  
11.76  
0.463  
1
16  
e
b
"X"  
E1  
e
10.16  
0.400  
Y
Y
1.27 BASIC  
0.050 BASIC  
0.60  
0.25  
0.024  
0.010  
0.004  
L
0.40  
0.50  
0.016  
0.020  
0.25 BASIC  
0.8 REF  
0.010 BASIC  
0.031 REF  
L1  
L2  
R
D
0.12  
0.12  
0.005  
0.005  
ZD  
R1  
0.95 REF  
0.037 REF  
ZD  
Y
0.10  
Y
SEATING PLANE  
-T-  
NOTE:  
1. CONTROLLING DIMENSION : MILLIMETERS.  
2. REFREENCE DOCUMENT : JEDEC MS-024  
3. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.  
MOLD PROTRUSION SHALL NOT EXCEED 0.15(0.006") PER SIDE.  
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.  
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25(0.01") PER SIDE.  
b
b1  
RAD R  
GAGE PLANE  
4. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.  
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO  
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm  
L
RAD R1  
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER  
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.  
WITH PLATING  
BASE METAL  
L2  
DETAIL "X"  
SECTION Y-Y  
TSOP II - 32  
Revision 1.2  
Aug. 2006  
R0201-BH62UV4000  
11