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BH62UV8000 参数 Datasheet PDF下载

BH62UV8000图片预览
型号: BH62UV8000
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM [Ultra Low Power/High Speed CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 127 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
n
PIN DESCRIPTIONS
BH62UV8000
Function
These 20 address inputs select one of the 1,048,576 x 8 bit in the RAM
Name
A0-A19 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in standby power mode. The DQ pins will be in the high impedance
state when the device is deselected.
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impendence state when OE is inactive.
8 bi-directional ports are used to read data from or write data into the RAM.
WE Write Enable Input
OE Output Enable Input
DQ0-DQ7 Data Input/Output
Ports
V
CC
V
SS
Power Supply
Ground
n
TRUTH TABLE
MODE
Chip De-selected
(Power Down)
Output Disabled
Read
Write
CE1
H
X
L
L
L
CE2
X
L
H
H
H
WE
X
X
H
H
L
OE
X
I/O OPERATION
High Z
V
CC
CURRENT
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
X
H
L
X
High Z
D
OUT
D
IN
NOTES: H means V
IH
; L means V
IL
; X means don’t care (Must be V
IH
or V
IL
state)
n
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
(1)
n
OPERATING RANGE
UNITS
V
O
O
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under
Bias
Storage Temperature
Power Dissipation
DC Output Current
RATING
-0.5
(2)
to 4.6V
-40 to +125
-60 to +150
1.0
20
RANG
Commercial
Industrial
AMBIENT
TEMPERATURE
0
O
C to + 70
O
C
-25
O
C to + 85
O
C
V
CC
1.65V ~ 3.6V
1.65V ~ 3.6V
C
C
W
mA
n
CAPACITANCE
(1)
(T
A
= 25 C, f = 1.0MHz)
O
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
2.
–2.0V
in case of AC pulse width less than 30 ns
R0201-BH62UV8000
SYMBOL PAMAMETER CONDITIONS MAX. UNITS
Input
V
IN
= 0V
6
Capacitance
Input/Output
C
IO
V
I/O
= 0V
8
Capacitance
1. This parameter is guaranteed and not 100% tested.
C
IN
pF
pF
2
Revision 1.0
Jul.
2005