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BH62UV8000DI-70 参数 Datasheet PDF下载

BH62UV8000DI-70图片预览
型号: BH62UV8000DI-70
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗/高速CMOS SRAM [Ultra Low Power/High Speed CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 127 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
n
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE 1
(1,2,4)
BH62UV8000
t
RC
ADDRESS
t
OH
D
OUT
(1,3,4)
t
AA
t
OH
READ CYCLE 2
CE1
t
ACS1
CE2
t
CLZ
D
OUT
(5)
t
ACS2
t
CHZ1
, t
CHZ2
(5)
READ CYCLE 3
(1, 4)
t
RC
ADDRESS
t
AA
OE
t
OE
CE1
t
CLZ1
CE2
t
CLZ2
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH
.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. Transition is measured
±
500mV from steady state with C
L
= 5pF.
The parameter is guaranteed but not 100% tested.
(5)
t
OH
t
OLZ
t
ACS1
t
OHZ
t
CHZ1
(5)
(1,5)
t
ACS2
(5)
t
CHZ2
(2,5)
R0201-BH62UV8000
5
Revision 1.0
Jul.
2005