BH62UV8001
n
AC ELECTRICAL CHARACTERISTICS (T
A
= -40 C to +85 C)
WRITE CYCLE
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
Write Cycle Time
Address Set up Time
Address Valid to End of Write
Chip Select to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
(CE1, WE)
(CE2)
55
0
45
45
35
0
0
--
25
0
--
5
CYCLE TIME : 55ns
MIN.
TYP.
--
--
--
--
--
--
--
--
--
--
--
--
MAX.
--
--
--
--
--
--
--
20
--
--
25
--
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
UNITS
O
O
t
AVAX
t
AVWL
t
AVWH
t
ELWH
t
WLWH
t
WHAX
t
E2LAX
t
WLQZ
t
DVWH
t
WHDX
t
GHQZ
t
WHQX
t
WC
t
AS
t
AW
t
CW
t
WP
t
WR1
t
WR2
t
WHZ
t
DW
t
DH
t
OHZ
t
OW
n
SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
t
WC
ADDRESS
t
WR1
OE
t
CW
CE1
(5)
(11)
(3)
CE2
(5)
t
AW
WE
t
AS
t
OHZ
D
OUT
(4,10)
t
CW
(11)
t
WR2
(2)
(3)
t
WP
t
DH
t
DW
D
IN
R0201-BH62UV8001
6
Revision 1.1
May
2006
BSI [ BRILLIANCE SEMICONDUCTOR ]
